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9N150 데이터시트(PDF) 3 Page - STMicroelectronics |
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9N150 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STW9N150 Electrical ratings 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 8 A ID Drain current (continuous) at TC = 100 °C 5 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 32 A PTOT Total dissipation at TC = 25 °C 320 W Derating factor 2.56 W/°C TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.39 °C/W Rthj-amb Thermal resistance junction-ambient max 50 °C/W TJ Maximum lead temperature for soldering purpose 300 °C/W Table 4. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 8A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 720 mJ |
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