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TDA5345HT 데이터시트(PDF) 37 Page - NXP Semiconductors

부품명 TDA5345HT
상세설명  5 V spindle & VCM driver combo
PDF  44 Pages
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA5345HT 데이터시트(HTML) 37 Page - NXP Semiconductors

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1999 June 10
37
Philips Semiconductors
Preliminary specification
5 V spindle & VCM driver combo
TDA5345HT
3-4 Spindle Pll Charge Pump (assuming that Resistor @ pin RefCurRes is exactly 33 k
Ω)
3-5 back-EMF comparator
4. VCM circuits
4-1 VCM driver
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Ich/disch00
charge/discharge current
PllCur[1, 0] = “00”
0.212
0.25
0.287
µA
Ich/disch01
charge/discharge current
PllCur[1, 0] = “01”
0.425
0.5
0.575
µA
Ich/disch10
charge/discharge current
PllCur[1, 0] = “10”
0.612
0.72
0.828
µA
Ich/disch11
charge/discharge current
PllCur[1, 0] = “11”
0.808
0.95
1.09
µA
SYMCur
chargedischarge currents
symetry
0.93
1.07
rise/Fall time
GbD
1
2
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
Unit
VOSen
comparator offset
start up mode
1
8
15
mV
VOSdis
comparator offset
running mode
-5
0
5
mV
VCT
center tap bias voltage
biasCt = ‘1’ or PorN = ‘0’
SpinRect
Bemf/2
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDSon
total FET resistance
(I VCM= 400 mA)
1.5
Ω
IOS
output offset current
DAC12 = “00000000000”
& RSense = 1 Ω
-10
+10
mA
IMax+400
maximum positive current
high Gain, without offset
384
400
416
mA
IMax-400
maximum negative current
high Gain, without offset
-416
-400
-384
mA
IMax+100
maximum positive current
low Gain, without offset
92.5
98.5
102.5
mA
IMax-100
maximum negative current
low Gain, without offset
-102.5
-98.5
-92.5
mA
Lin
transconductance linearity
3 different sections
measured
-3
+3
%
IQUIES
quiescent current
2 legs of the H-bridge
3.4
15
mA
VVcmVdd5Div2
reference voltage accuracy Ref = Vdd5/2
-3
+3
%
GPD
power driver gain
4.8
4.95
5.1
V/V
DISTO
crossover distortion
GbD
0
Vfbmax
max voltage on Vcm+ or
Vcm-
positive fly-back, I<100 mA
Vdd5+
0.1
Vdd5+
0.2
Vdd5+
0.3
V
Vfbmin
min voltage on Vcm+/-
negative fly-back,
I<100 mA
-0.3
-0.2
-0.1
V
VRetRefSR
retract circutry ref voltage
slow retract mode
110
125
140
mV
VRetRefFP
retract circutry ref voltage
full power retract mode
220
250
280
mV
VRetLim
retract voltage limitation
full power retract mode
2.45
2.8
3.14
V
RRetTot
total mos resistance in
retract mode
spinRectBemf >= 2.5 V
GbD
3.5
Ω



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