| 전자부품 데이터시트 검색엔진 |
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VL53L4ED 데이터시트(PDF) 19 Page - STMicroelectronics |
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VL53L4ED 데이터시트(HTML) 19 Page - STMicroelectronics |
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19 / 39 page ![]() 6.4 Current consumption Table 14. Power consumption at ambient temperature All current consumption values include silicon process variations. Temperature and voltage are nominal conditions (23°C and 2v8). All values include AVDD and AVDDVCSEL. Parameter Min. Typ. Max. Unit HW STANDBY 3 5 7 μA SW STANDBY 4 6 9 Active ranging average consumption (including VCSEL) (1) (2) 22 24 mA 1. Active ranging is an average value, measured using the default driver settings. 2. Peak current (including VCSEL) can reach 40 mA. 6.5 Digital input and output Table 15. Digital I/O electrical characteristics Symbol Parameter Min. Typ. Max. Unit Interrupt pin (GPIO1) VIL Low level input voltage — — 0.3 IOVDD V VIH High level input voltage 0.7 IOVDD — VOL Low level output voltage (IOUT = 4 mA) — 0.4 VOH High level output voltage (IOUT = 4 mA) IOVDD-0.4 — FGPIO Operating frequency (CLOAD = 20 pF) 0 108 MHz I²C interface (SDA/SCL) VIL Low level input voltage -0.5 — 0.6 V VIH High level input voltage 1.12 3.5 VOL Low level output voltage (IOUT = 4 mA) — 0.4 IIL/IH Leakage current (1) — 10 Leakage current (2) — 0.15 μA 1. AVDD = 0 V 2. AVDD = 2.85 V, and I/O voltage = 1.8 V VL53L4ED Electrical characteristics DS14256 - Rev 3 page 19/39 |
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