20NM50

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 9

www.unisonic.com.tw

QW-R205-158.F

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ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

500

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous

ID

20

A

Pulsed (Note 2)

IDM

40

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

545

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

9.5

V/ns

Power Dissipation

TO-220

PD

110

W

TO-220F1/TO-220F3

32

W

TO-247

180

W

TO-252

62

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 100mH, IAS = 3.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

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THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F1

TO-220F3

θJA

62.5

°С/W

TO-247

40

°С/W

TO-252

110

°С/W

Junction to Case

TO-220

θJC

1.13

°С/W

TO-220F1/TO-220F3

3.91

°С/W

TO-247

0.69

°С/W

TO-252

2.01

°С/W