20NM50

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R205-158.F



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

500

V

Drain-Source Leakage Current

IDSS

VDS=500V, VGS=0V

25

µA

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±30V

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.5

4.5

V

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=10A

0.24

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1MHz

1090

pF

Output Capacitance

COSS

880

pF

Reverse Transfer Capacitance

CRSS

120

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

QG

VDS=400V, VGS=10V, ID=20A

(Note 1, 2)

43

nC

Gate to Source Charge

QGS

6

nC

Gate to Drain Charge

QGD

18

nC

Turn-ON Delay Time (Note 1)

tD(ON)

VDD=100V, VGS=10V, ID=20A,

RG=25Ω (Note 1, 2)

16

ns

Rise Time

tR

30

ns

Turn-OFF Delay Time

tD(OFF)

134

ns

Fall-Time

tF

50

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

20

A

Maximum Body-Diode Pulsed Current

ISM

40

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=20A, VGS=0V

1.4

V

Body Diode Reverse Recovery Time (Note 1)

trr

IS=20A, VGS=0V,

dIF/dt=100A/µs

430

ns

Body Diode Reverse Recovery Charge

Qrr

6.95

µC

Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating ambient temperature.