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6N100L-TN3-R 데이터시트(PDF) 7 Page - Unisonic Technologies

부품명 6N100L-TN3-R
상세설명  6A, 1000V N-CHANNEL POWER MOSFET
PDF  9 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N100L-TN3-R 데이터시트(HTML) 7 Page - Unisonic Technologies

  6N100L-TN3-R Datasheet HTML 1Page - Unisonic Technologies 6N100L-TN3-R Datasheet HTML 2Page - Unisonic Technologies 6N100L-TN3-R Datasheet HTML 3Page - Unisonic Technologies 6N100L-TN3-R Datasheet HTML 4Page - Unisonic Technologies 6N100L-TN3-R Datasheet HTML 5Page - Unisonic Technologies 6N100L-TN3-R Datasheet HTML 6Page - Unisonic Technologies 6N100L-TN3-R Datasheet HTML 7Page - Unisonic Technologies 6N100L-TN3-R Datasheet HTML 8Page - Unisonic Technologies 6N100L-TN3-R Datasheet HTML 9Page - Unisonic Technologies  
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6N100-FC
Power MOSFET
UNISONIC TECHNOLOGIES CO.,LTD
7 of 9
www.unisonic.com.tw
QW-R205-517.B
TYPICAL CHARACTERISTICS
Drain-Source Voltage, VDS (V)
Drain-Source On-Resistance vs.
Gate-Source Voltage
Gate-Source Voltage, VGS (V)
Gate Charge Characteristics
Total Gate Charge, QG (nC)
2
4
6
12
10
8
Drain-Source On-Resistance vs.
Junction Temperature
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
5V
ID=3A
6A
Capacitance Characteristics
Note:
1.TA=25°C
2.Pulse test
Breakdown Voltage vs. Junction
Temperature
Junction Temperature, TJ (°C)
0
10
40
50
30
20
CISS
COSS
CRSS
Drain Current vs. Drain-Source
Voltage
VGS=6~10V
Note:
1.TA=25°C
2.Pulse test
VDS=800V
VGS=10V
ID=6A
Pulsed
VGS=10V
ID=3A
Pulsed
ID=0.25mA
Pulsed
4
5
6
8
7
0
25
50
75
100
125
150
25
50
75
100
125
150
100
1
1000
10
0
1
2
5
4
3
0
2
4
8
10
14
12
6
8
6
3
2
0
1
4
7
5
0
4
8
12
16
20
3
4
5
8
7
6
1.4
1
1.2
0.8
5.5V



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