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6N100L-TN3-R 데이터시트(PDF) 8 Page - Unisonic Technologies |
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6N100L-TN3-R 데이터시트(HTML) 8 Page - Unisonic Technologies |
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8 / 9 page ![]() 6N100-FC Power MOSFET UNISONIC TECHNOLOGIES CO.,LTD 8 of 9 www.unisonic.com.tw QW-R205-517.B TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature Junction Temperature, TJ (°C) Source Current vs. Source-Drain Voltage Source-Drain Voltage, VSD (V) Drain Current vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Drain Current, ID (A) 25°C TA=150°C Drain-Source On-Resistance vs. Drain Current TA=25°C VGS=10V Pulsed TA=25°C Pulsed Drain Current vs. Junction Temperature Junction Temperature, TJ (°C) ID=0.25mA Pulsed Power Dissipation vs. Junction Temperature Junction Temperature, TJ (°C) 0 25 50 75 100 125 150 1 10 9 3 6 0 0.1 25 50 75 100 125 150 25 50 75 100 125 150 TO-220F1 45 35 20 15 0 10 25 40 30 5 3 4 2 3.5 2.5 0.3 0.5 0.7 0.9 1.2 1 0.4 0.6 0.8 1.1 6 2 4 0 0 2 4 6 8 10 1 2 3 6 5 4 0 2 4 8 6 |
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