TC647BEPATR datasheet(3/34 Pages) MICROCHIP

3 / 34 page

 2003 Microchip Technology Inc.

DS21756B-page 3

TC642B/TC647B

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage (VDD) .......................................................6.0V

Input Voltage, Any Pin................(GND - 0.3V) to (VDD +0.3V)

Operating Temperature Range ....................- 40°C to +125°C

Maximum Junction Temperature, TJ ...........................+150°C

ESD Protection on all pins ........................................... > 3 kV

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied. Expo-

sure to maximum rating conditions for extended periods may

affect device reliability.

PIN FUNCTION TABLE

Name

Function

VIN

Analog Input

Analog Output

VMIN

Analog Input

GND

Ground

SENSE

Analog Input

FAULT

Digital (Open-Drain) Output

VOUT

Digital Output

VDD

Power Supply Input

ELECTRICAL SPECIFICATIONS

Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < TA < +85°C, VDD = 3.0V to 5.5V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Supply Voltage

VDD

3.0

—

5.5

Supply Current, Operating

IDD

—

200

400

µA

Pins 6, 7 Open,

CF = 1 µF, VIN = VC(MAX)

Supply Current, Shutdown Mode

IDD(SHDN)

—

µA

Pins 6, 7 Open,

CF = 1 µF, VMIN = 0.35V

VOUT Output

Sink Current at VOUT Output

IOL

1.0

—

VOL = 10% of VDD

Source Current at VOUT Output

IOH

5.0

—

VOH = 80% of VDD

VIN, VMIN Inputs

Input Voltage at VIN or VMIN for 100%

PWM Duty Cycle

VC(MAX)

2.45

2.60

2.75

Over-Temperature Indication

Threshold

VOTF

VC(MAX) +

20 mV

For TC642B Only

Over-Temperature Indication

Threshold Hysteresis

VOTF-HYS

For TC642B Only

VC(MAX) - VC(MIN)

VC(SPAN)

1.3

1.4

1.5

Minimum Speed Threshold

VMIN

VC(MAX) -

VC(SPAN)

VC(MAX)

Voltage Applied to VMIN to Ensure

Shutdown Mode

VSHDN

——

VDD x 0.13

Voltage Applied to VMIN to Release

Shutdown Mode

VREL

VDD x 0.19

—

VDD = 5V

Hysteresis on VSHDN, VREL

VHYST

—

0.03 x VDD

—V

VIN, VMIN Input Leakage

IIN

- 1.0

—

+1.0

µA

Note 1

Pulse-Width Modulator

PWM Frequency

fPWM

CF = 1.0 µF

Note 1:

Ensured by design, tested during characterization.

For VDD < 3.7V, tSTARTUP and tMP timers are typically 13/f.

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