| 전자부품 데이터시트 검색엔진 |
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TC647BEPATR 데이터시트(PDF) 4 Page - Microchip Technology |
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TC647BEPATR 데이터시트(HTML) 4 Page - Microchip Technology |
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4 / 34 page ![]() TC642B/TC647B DS21756B-page 4 2003 Microchip Technology Inc. TEMPERATURE SPECIFICATIONS SENSE Input SENSE Input Threshold Voltage with Respect to GND VTH(SENSE) 50 70 90 mV Blanking time to ignore pulse due to VOUT turn-on tBLANK —3.0 — µsec FAULT Output Output Low Voltage VOL —— 0.3 V IOL = 2.5 mA Missing Pulse Detector Timer tMP —32/f — sec Note 2 Start-Up Timer tSTARTUP —32/f — sec Note 2 Diagnostic Timer tDIAG — 3/f — sec Electrical Characteristics: Unless otherwise noted, all parameters apply at VDD = 3.0V to 5.5V Parameters Symbol Min Typ Max Units Conditions Temperature Ranges: Specified Temperature Range TA -40 — +85 °C Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Thermal Package Resistances: Thermal Package Resistance, 8-Pin MSOP θJA — 200 — °C/W Thermal Package Resistance, 8-Pin SOIC θJA — 155 — °C/W Thermal Package Resistance, 8-Pin PDIP θJA — 125 — °C/W ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Specifications: Unless otherwise specified, all limits are specified for -40°C < TA < +85°C, VDD = 3.0V to 5.5V. Parameters Sym Min Typ Max Units Conditions Note 1: Ensured by design, tested during characterization. 2: For VDD < 3.7V, tSTARTUP and tMP timers are typically 13/f. |
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