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PIC18F258-E/LSQTP 데이터시트(PDF) 336 Page - Microchip Technology

부품명 PIC18F258-E/LSQTP
상세설명  28/40-Pin High-Performance, Enhanced Flash Microcontrollers with CAN Module
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제조업체  MICROCHIP [Microchip Technology]
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PIC18FXX8
DS41159E-page 334
© 2006 Microchip Technology Inc.
IDD
Supply Current(2,3,4)
D010C
PIC18LFXX8
—21
28
mA
EC, ECIO oscillator configurations
VDD = 4.2V, -40°C to +85°C
D010C
PIC18FXX8
—
21
30
mA
EC, ECIO oscillator configurations
VDD = 4.2V, -40°C to +125°C,
FOSC = 25 MHz
D013
PIC18LFXX8
—
—
—
1.3
18
28
3
28
40
mA
mA
mA
HS oscillator configurations
FOSC = 6 MHz, VDD = 2.0V
FOSC = 25 MHz, VDD = 5.5V
HS + PLL osc configuration
FOSC = 10 MHz, VDD = 5.5V
D013
PIC18FXX8
—
—
18
28
28
40
mA
mA
HS oscillator configurations
FOSC = 25 MHz, VDD = 5.5V
HS + PLL osc configuration
FOSC = 10 MHz, VDD = 5.5V
D014
PIC18LFXX8
—32
65
μA
Timer1 oscillator configuration
FOSC = 32 kHz, VDD = 2.0V
D014
PIC18FXX8
—
—
62
62
250
310
μA
μA
Timer1 oscillator configuration
FOSC = 32 kHz, VDD = 4.2V, -40°C to +85°C
FOSC = 32 kHz, VDD = 4.2V, -40°C to +125°C
IPD
Power-Down Current(3)
D020
PIC18LFXX8
—
—
0.3
2
4
10
μA
μA
VDD = 2.0V, -40
°C to +85°C
VDD = 4.2V, -40
°C to +85°C
D020
PIC18FXX8
—
2
10
μA VDD = 4.2V, -40°C to +85°C
D021B
—
6
40
μA VDD = 4.2V, -40°C to +125°C
27.1
DC Characteristics (Continued)
PIC18LFXX8
(Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for industrial
PIC18FXX8
(Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for industrial
-40°C
≤ TA ≤ +125°C for extended
Param
No.
Symbol
Characteristic/
Device
Min
Typ
Max Units
Conditions
Legend: Rows are shaded for improved readability.
Note 1:
This is the limit to which VDD can be lowered in Sleep mode, or during a device Reset, without losing RAM
data.
2:
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O
pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have
an impact on the current consumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD
MCLR = VDD; WDT enabled/disabled as specified.
3:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD and VSS
and all features that add delta current disabled (such as WDT, Timer1 Oscillator, BOR, ...).
4:
For RC oscillator configuration, current through REXT is not included. The current through the resistor can
be estimated by the formula Ir = VDD/2 REXT (mA) with REXT in kOhm.
5:
The LVD and BOR modules share a large portion of circuitry. The
ΔIBOR and ΔILVD currents are not
additive. Once one of these modules is enabled, the other may also be enabled without further penalty.



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