| 전자부품 데이터시트 검색엔진 |
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P4C1049 데이터시트(PDF) 5 Page - Pyramid Semiconductor Corporation |
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P4C1049 데이터시트(HTML) 5 Page - Pyramid Semiconductor Corporation |
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5 / 12 page ![]() P4C1049 Page 5 of 12 Document # SRAM128 REV OR TIMING WAVEFORM OF READ CYCLE NO. 2 (ADDRESS CONTROLLED)(5,6) TIMING WAVEFORM OF READ CYCLE NO. 3 (CE CE CE CE CE CONTROLLED)(5,7) Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with V IL and IIL not more negative than –2.0V and –100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. 5. WE is HIGH for READ cycle. 6. CE is LOW and OE is LOW for READ cycle. 7. ADDRESS must be valid prior to, or coincident with CE transition LOW. 8. Transition is measured ± 200 mV from steady state voltage prior to change, with loading as specified in Figure 1. This parameter is sampled and not 100% tested. 9. Read Cycle Time is measured from the last valid address to the first transitioning address. |
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