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P4C1049 데이터시트(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C1049 데이터시트(HTML) 3 Page - Pyramid Semiconductor Corporation |
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3 / 12 page ![]() P4C1049 Page 3 of 12 Document # SRAM128 REV OR *V CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH. I CC Symbol Parameter Temperature Range Dynamic Operating Current* Commercial Industrial Military –15 N/A –20 –25 –35 –45 –55 –70 Unit N/A mA mA mA POWER DISSIPATION CHARACTERISTICS VS. SPEED N/A N/A N/A N/A 220 N/A 185 190 180 N/A 185 175 N/A DATA RETENTION CHARACTERISTICS (P4C1049L Military Temperature Only) Symbol V DR I CCDR t CDR t R † Parameter V CC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Test Conditons CE ≥ V CC –0.2V, V IN ≥ VCC –0.2V or V IN ≤ 0.2V Min 3.0 0 t RC § Typ.* V CC = 3.0V Max V CC = 3.0V Unit 23 V mA ns ns *T A = +25°C §t RC = Read Cycle Time † This parameter is guaranteed but not tested. DATA RETENTION WAVEFORM 165 170 200 195 185 175 |
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