ABSOLUTE MAXIMUM RATINGS*

PARAMETER

SYMBOL

RATING

UNIT

-0.5 to 6.5

V

0 to 70(C grade)

T

e

r

u

t

a

r

e

p

m

e

T

g

n

it

a

r

e

p

O

A

-40 to 85(I grade)

T

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

STG

-65 to 150

ºC

ºC

P

n

o

it

a

p

i

s

s

i

D

r

e

w

o

P

D

1

W

I

t

n

e

r

r

u

C

t

u

p

t

u

O

C

D

OUT

50

mA

Soldering Temperature (under 10 sec)

260

ºC

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

TRUTH TABLE

MODE

CE#

OE#

WE#

I/O OPERATION

SUPPLY CURRENT

Standby

H

X

X

High-Z

Output Disable

L

H

H

High-Z

Read

L

L

H

Write

L

X

L

DC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

UNIT

Supply Voltage

V

5

.

5

0

.

3

7

.

2

Input High Voltage

V

*

7

.

0

CC

-

V

Input Low Voltage

V

6

.

0

-

2

.

0

-

Input Leakage Current

- 1

-

1

µA

Output Leakage

Current

Output Disabled

- 1

-

1

µA

Output High Voltage

V

-

-

4

.

2

A

m

1

-

=

Output Low Voltage

-

-

0.4

V

- 55

-

30

60

mA

Cycle time = Min.

Average Operating

Power supply Current

Cycle time = 1µs

-

4

10

mA

*C

4

µA

Standby Power

Supply Current

CE# V

- 0.2V

*I

4

µA

2. Over/Undershoot specifications are characterized, not 100% tested.

3. Typical values are included for reference only and are not guaranteed or tested.

4. 25µA for special request

*C=Commercial temperature/I = Industrial temperature

®

-

-

February 2007

AS6C4008

02/FEB/07, v 1.0

Alliance Memory Inc.

Page 3 of 15

512K X 8 BIT LOW POWER CMOS SRAM