| 전자부품 데이터시트 검색엔진 |
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AS6C4008 데이터시트(PDF) 7 Page - Alliance Semiconductor Corporation |
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AS6C4008 데이터시트(HTML) 7 Page - Alliance Semiconductor Corporation |
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7 / 15 page ![]() DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCC for Data Retention VDR CE# V ≧ CC - 0.2V 2.0 - 5.5 V **C - 2 30 µ Data Retention Current DR VCC = 2.0V CE# V ≧ CC - 0.2V **I - 2 30 µ A Chip Disable to Data Retention Time tCDR See Data Retention Waveforms (below) 0 - - ns Recovery Time tR tRC* - - ns tRC* = Read Cycle Time **C=Commercial temperature/I=Industrial temperature DATA RETENTION WAVEFORM Vcc CE# VDR ≧ 2.0V CE# V ≧ cc-0.2V Vcc(min.) VIH tR tCDR VIH Vcc(min.) ® I February 2007 AS6C4008 02/FEB/07, v 1.0 Alliance Memory Inc. Page 7 of 15 512K X 8 BIT LOW POWER CMOS SRAM |
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