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STM32F103X6 데이터시트(PDF) 37 Page - STMicroelectronics |
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STM32F103X6 데이터시트(HTML) 37 Page - STMicroelectronics |
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37 / 67 page ![]() STM32F103xx Electrical characteristics 37/67 5.3.7 Internal clock source characteristics The parameters given in Table 19 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 7. High-speed internal (HSI) RC oscillator LSI Low Speed Internal RC Oscillator Table 19. HSI oscillator characteristics(1)(2) 1. VDD = 3.3 V, TA = −40 to 105 °C unless otherwise specified. 2. TBD stands for to be determined. Symbol Parameter Conditions Min Typ Max(3) 3. Values based on device characterization, not tested in production. Unit fHSI Frequency 8 MHz ACCHSI Accuracy of HSI oscillator TA = –40 to 105 °C TBD ±3TBD % at TA = 25°C TBD ±1TBD % tsu(HSI) HSI oscillator start up time 1 2 µs IDD(HSI) HSI oscillator power consumption 80 100 µA Table 20. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = −40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max(2) 2. Value based on device characterization, not tested in production. Unit fLSI Frequency 30 60 kHz tsu(LSI) LSI oscillator start up time 85 µs IDD(LSI) LSI oscillator power consumption 0.65 1.2 µA |
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