STM32F103X6 datasheet(43/67 Pages) STMICROELECTRONICS

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STM32F103xx

Electrical characteristics

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5.3.12

I/O port pin characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 29 are derived from tests

performed under ambient temperature and VDD supply voltage conditions summarized in

Table 7.

All unused pins must be held at a fixed voltage, by using the I/O output mode, an external

pull-up or pull-down resistor (see Figure 15).

Table 29.

I/O static characteristics(1)

VDD = 3.3 V, TA = −40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

Input low level voltage(2)

Values based on characterization results, and not tested in production.

TTL ports

–0.5

0.8

VIH

IO TC input high level

voltage(2)

2VDD+0.5

IO FT high level voltage(2)

25.5V

VIL

Input low level voltage(2)

CMOS ports

–0.5

0.35 VDD

VIH

Input high level voltage(2)

0.65 VDD

VDD+0.5

Vhys

IO TC Schmitt trigger voltage

hysteresis(3)

Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.

200

IO TC Schmitt trigger voltage

hysteresis(3)

5% VDD

(4)

With a minimum of 100 mV.

Ilkg

Input leakage current (5)

Leakage could be higher than max. if negative current is injected on adjacent pins.

VSS ≤VIN ≤VDD

Standard I/Os

±1

µA

VIN= 5 V

5 V tolerant I/Os

RPU

Weak pull-up equivalent

resistor(6)

Pull-up and pull-down resistors are designed with a true resistance in series with a switchable

PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order)

VIN = VSS

Ω

RPD

Weak pull-down equivalent

resistor(6)

VIN = VDD

Ω

CIO

I/O pin capacitance

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