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BUV48A 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 BUV48A
상세설명  High voltage fast switching NPN power transistor
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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BUV48A 데이터시트(HTML) 3 Page - STMicroelectronics

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BUV48A
Electrical characteristics
3/8
2
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 1000 V
VCE = 1000 V
Tc = 125°C
200
2
µA
mA
ICER
Collector cut-off current
(RBE = 10Ω)
VCE = 1000 V
VCE = 1000 V
Tc = 125°C
500
4
µA
mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5V
1mA
VCEO(sus)
(1)
1.
Pulsed duration = 300 ms, duty cycle
≤2%.
Collector-emitter
sustaining voltage
(IB = 0)
IC = 200mA
450
V
VEBO
Emitter-base voltage
(IC = 0)
IE = 50mA
730
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 8A
IB = 1.6A
IC = 12A
IB = 2.4A
1.5
5
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 8A
IB = 1.6A
1.6
V
ton
ts
tf
Resistive load
Turn-on time
Storage time
Fall time
VCC = 150V
IC = 8A
IB1 = -IB2 = 1.6A
1
3
0.8
µs
µs
µs
ts
tf
Inductive load
Storage time
Fall time
VCC = 300 V
IC = 8A
VBE = -5V
IB1 = 1.6A
LB = 3µH
3
0.13
µs
µs
ts
tf
Inductive load
Storage time
Fall time
VCC = 300 V
IC = 8A
VBE = -5V
IB1 = 1.6A
LB = 3µH
TC = 125
oC
5
0.4
µs
µs



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