M58PR512J datasheet(65/114 Pages) STMICROELECTRONICS

65 / 114 page

M58PR256J, M58PR512J

Program and erase times and endurance cycles

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Program and erase times and endurance cycles

The Program and Erase times and the number of Program/ Erase cycles per Block are

shown in Table 22 Exact erase times may change depending on the memory array

condition. The best case is when all the bits in the Block are at ‘0’ (pre-programmed). The

worst case is when all the bits in the Block are at ‘1’ (not preprogrammed). Usually, the

system overhead is negligible with respect to the erase time. In the M58PRxxxJ the

maximum number of Program/Erase cycles depends on the VPP voltage supply used.

Table 22.

Program/Erase times and endurance cycles(1) (2)

Parameter

Condition

Min

Typ

Typical after

100kW/E

Cycles

Max

Unit

Erase

EFA Block (4 KWord)

0.4

2.5

Main Array Block 128 KWord)

0.9

Program(3)

Single Cell(4)

Word Program(5)

230

µs

Buffer Program

250

500

µs

Single Word(4)

Word Program(5)

230

µs

Buffer Program

250

500

µs

Buffer (512 Words) (Buffer

Program)

2.15

4.3

EFA Block (4 KWord)

0.2

0.94

Main Array Block (128 KWord)

(Buffer Program)

0.55

1.1

Suspend Latency

Program

µs

Erase

µs

Program/Erase

Cycles (per Block)

Main Array Block

100,000

cycles

EFA Block

100,000

Blank Check

Main Array Block

3.2

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