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M48T35AY 데이터시트(PDF) 18 Page - STMicroelectronics |
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M48T35AY 데이터시트(HTML) 18 Page - STMicroelectronics |
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18 / 25 page ![]() M48T35AY, M48T35AV 18/25 Figure 15. Power Down/Up Mode AC Waveforms Table 10. Power Down/Up AC Characteristics Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted). 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass- es VPFD (min). 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. 4. trec (min) = 20ms for industrial temperature Grade 6 device. Table 11. Power Down/Up Trip Points DC Characteristics Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where noted). 2. All voltages referenced to VSS. 3. CAPHAT and M4T32-BR12SH1 SNAPHAT only, M4T28-BR12SH1 SNAPHAT top tDR = 7 years (typ). 4. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - Grade 6 device). 5. At 25°C, VCC = 0V. Symbol Parameter(1) Min Max Unit tPD E or W at VIH before Power Down 0µs tF (2) VPFD (max) to VPFD (min) VCC Fall Time 300 µs tFB (3) VPFD (min) to VSS VCC Fall Time M48T35AY 10 µs M48T35AV 150 µs tR VPFD (min) to VPFD (max) VCC Rise Time 10 µs tRB VSS to VPFD (min) VCC Rise Time 1µs trec (4) VPFD (max) to Inputs Recognized 40 200 ms Symbol Parameter(1,2) Min Typ Max Unit VPFD Power-fail Deselect Voltage M48T35AY 4.2 4.35 4.5 V M48T35AV 2.7 2.9 3.0 V VSO Battery Back-up Switchover Voltage M48T35AY 3.0 V M48T35AV VPFD –100mV V tDR (5) Expected Data Retention Time Grade 1 10(3) YEARS Grade 6 10(4) YEARS AI01168C VCC INPUTS (PER CONTROL INPUT) OUTPUTS DON'T CARE HIGH-Z tF tFB tR tPD tRB tDR VALID VALID (PER CONTROL INPUT) RECOGNIZED RECOGNIZED VPFD (max) VPFD (min) VSO trec |
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