| 전자부품 데이터시트 검색엔진 |
|
AS8267 데이터시트(PDF) 85 Page - ams AG |
|
|
|||||||||||||||||||||||||||||
AS8267 데이터시트(HTML) 85 Page - ams AG |
|
85 / 136 page ![]() Data Sheet AS8267 / AS8268 Revision 1.0, 19-Jun-07 Page 85 of 136 FLASH Memory Reliability The 32kByte Flash memory implemented in the AS8267 / AS8268 ICs provide an outstanding performance in respect to data retention time and endurance. Endurance is the parameter that specifies the cumulative write/erase cycles of the memory cells within the Flash memory. The data retention time of a Flash memory is a critical end-of-life parameter. This parameter specifies the maximum period of time, after programming, that data can be expected to be retrieved valid from the memory. According to the JEDEC A117 specification the Flash memory has a minimum endurance of 100,000 cycles and a retention time of 500 years at 65°C. Data Retention EEPROM austriamicrosystems AG Ea=0.6eV 0 25 50 75 100 125 150 175 200 225 250 275 300 75 85 95 105 115 125 135 145 Junction Temperature [°C] FLASH Security The AS8267 / AS8268 comprise of two different possibilities to protect Flash content against copying and manipulation. The detailed implementation will be explained in this chapter. |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |