| 전자부품 데이터시트 검색엔진 |
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STR71XF 데이터시트(PDF) 46 Page - STMicroelectronics |
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STR71XF 데이터시트(HTML) 46 Page - STMicroelectronics |
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46 / 77 page ![]() Electrical parameters STR71xF 46/77 5.3.3 Memory characteristics Flash memory V33 = 3.0 to 3.6V, TA = -40 to 85 °C unless otherwise specified. Notes: 1. TA=45°C after 0 cycles. Guaranteed by characterization, not tested in production. 2. Guaranteed by design, not tested in production Table 23. Flash memory characteristics Symbol Parameter Test Conditions Value Unit Min. Typ Max1) tPW Word Program 40 µs tPDW Double Word Program 60 µs tPB0 Bank 0 Program (256K) Double Word Program 1.6 2.1 s tPB1 Bank 1 Program (16K) Double Word Program 130 170 ms tES Sector Erase (64K) Not preprogrammed Preprogrammed 2.3 1.9 4.0 3.3 s tES Sector Erase (8K) Not preprogrammed Preprogrammed 0.7 0.6 1.1 1.0 s tES Bank 0 Erase (256K) Not preprogrammed Preprogrammed 8.0 6.6 13.7 11.2 s tES Bank 1 Erase (16K) Not preprogrammed Preprogrammed 0.9 0.8 1.5 1.3 s tRPD 2) Recovery when disabled 20 µs tPSL 2) Program Suspend Latency 10 µs tESL 2) Erase Suspend Latency 300 µs NEND_B0 Endurance (Bank 0 sectors) 10 kcycles NEND_B1 Endurance (Bank 1 sectors) 100 kcycles tRET Data Retention (Bank 0 and Bank 1) TA=85° 20 Years tESR Erase Suspend Rate Min time from Erase Resume to next Erase Suspend 20 ms |
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