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ST7GEME4 데이터시트(PDF) 22 Page - STMicroelectronics |
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ST7GEME4 데이터시트(HTML) 22 Page - STMicroelectronics |
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22 / 28 page ![]() Electrical characteristics ST7GEME4 22/28 Software recommendations The software flowchart must include the management of runaway conditions such as: ● Corrupted program counter ● Unexpected reset ● Critical Data corruption (control registers...) Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). 4.7.2 Electromagnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies the board and the loading of each pin. Table 19. EMS characteristics Symbol Parameter Conditions Level/ Class VFESD Voltage limits to be applied on any I/O pin to induce a functional disturbance VDD=5V, TA=+25 °C, fOSC=8MHz conforms to IEC 1000-4-2 2B VFFTB Fast transient voltage burst limits to be applied through 100 pF on VDD and VDD pins to induce a functional disturbance VDD=5V, TA=+25 °C, fOSC=8MHz conforms to IEC 1000-4-4 4B Table 20. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fOSC/fCPU] (1) 1. Data based on characterization results, not tested in production. Unit 4/8MHz 4/4MHz SEMI Peak level VDD=5V, TA=+25 °C, conforming to SAE J 1752/3 0.1 MHz to 30 MHz 19 18 dB µ V 30 MHz to 130 MHz 32 27 130 MHz to 1GHz 31 26 SAE EMI Level 4 3.5 - |
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