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GD50PIX65C5S 데이터시트(PDF) 4 Page - StarPower Europe AG |
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GD50PIX65C5S 데이터시트(HTML) 4 Page - StarPower Europe AG |
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4 / 13 page ![]() GD50PIX65C5S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 2/9/2018 4/13 Preliminary Diode-inverter Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IF=50A,VGE=0V,Tj=25 oC 1.55 2.05 V IF=50A,VGE=0V,Tj=125 oC 1.50 IF=50A,VGE=0V,Tj=150 oC 1.45 Qr Recovered Charge VR=300V,IF=50A, -di/dt=2420A/ μs,V GE=-15V Tj=25 oC 2.2 μC IRM Peak Reverse Recovery Current 55 A Erec Reverse Recovery Energy 0.55 mJ Qr Recovered Charge VR=300V,IF=50A, -di/dt=2420A/ μs,V GE=-15V Tj=125 oC 4.3 μC IRM Peak Reverse Recovery Current 66 A Erec Reverse Recovery Energy 1.10 mJ Qr Recovered Charge VR=300V,IF=50A, -di/dt=2420A/ μs,V GE=-15V Tj=150 oC 4.8 μC IRM Peak Reverse Recovery Current 72 A Erec Reverse Recovery Energy 1.27 mJ Diode-rectifier Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IF=50A,Tj=150 oC 1.00 V IR Reverse Current Tj=150 oC,V R=1600V 3.0 mA |
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