GD50PIX65C5S datasheet(6/13 Pages) STARPOWER

6 / 13 page

GD50PIX65C5S

IGBT Module

2/9/2018

6/13

Preliminary

Diode-brake Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Diode Forward

Voltage

IC=20A,VGE=0V,Tj=25

1.60

2.05

IC=20A,VGE=0V,Tj=125

1.55

IC=20A,VGE=0V,Tj=150

1.50

Recovered Charge

VR=300V,IF=20A,

-di/dt=1800A/

μs,V

GE=-15V

Tj=25

1.00

μC

IRM

Peak Reverse

Recovery Current

30.0

Erec

Reverse Recovery

Energy

0.21

Recovered Charge

VR=300V,IF=20A,

-di/dt=1800A/

μs,V

GE=-15V

Tj=125

1.75

μC

IRM

Peak Reverse

Recovery Current

32.0

Erec

Reverse Recovery

Energy

0.37

Recovered Charge

VR=300V,IF=20A,

-di/dt=1800A/

μs,V

GE=-15V

Tj=150

2.20

μC

IRM

Peak Reverse

Recovery Current

34.0

Erec

Reverse Recovery

Energy

0.47

NTC Characteristics T

C=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

∆R/R

Deviation of R100

TC=100

oC,R

100=493.3

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

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