2SC3437 datasheet(1/5 Pages) TOSHIBA

부품명	2SC3437

상세설명	Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2SC3437

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3437

Ultra High Speed Switching Applications

Computer, Counter Applications

• High transition frequency: fT = 400 MHz (typ.)

• Low saturation voltage: VCE (sat) = 0.3 V (max)

• High speed switching time: tstg = 15 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

40

V

Collector-emitter voltage

VCEO

15

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

200

mA

Base current

IB

40

mA

Collector power dissipation

PC

150

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)

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