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2SC3437 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SC3437 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SC3437 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA hFE (1) (Note) VCE = 1 V, IC = 10 mA 40 ⎯ 240 DC current gain hFE (2) VCE = 1 V, IC = 100 mA 20 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 20 mA, IB = 1 mA ⎯ ⎯ 0.3 V Base-emitter saturation voltage VBE (sat) IC = 20 mA, IB = 1 mA ⎯ ⎯ 1.0 V Transition frequency fT VCE = 10 V, IC = 10 mA 200 400 ⎯ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 4 6 pF Turn-on time ton ⎯ 70 ⎯ Storage time tstg ⎯ 15 ⎯ Switching time Fall time tf Duty cycle <= 2% ⎯ 30 ⎯ ns Note: hFE (1) classification R: 40~80, O: 70~140, Y: 120~240 |
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