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ST10F272M 데이터시트(PDF) 148 Page - STMicroelectronics

부품명 ST10F272M
상세설명  16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
PDF  175 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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ST10F272M 데이터시트(HTML) 148 Page - STMicroelectronics

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Electrical characteristics
ST10F272M
148/176
24.8.11
Main oscillator specifications
VDD = 5V ± 10%, VSS = 0V, TA = -40 to +125°C
Figure 47.
Crystal oscillator and resonator connection diagram
The given values of CA do not include the stray capacitance of the package and of the
printed circuit board: the negative resistance values are calculated assuming additional 5pF
to the values in the table. The crystal shunt capacitance (C0) and the package capacitance
between XTAL1 and XTAL2 pins is globally assumed equal to 10pF.
The external resistance between XTAL1 and XTAL2 is not necessary, since already present
on the silicon.
Table 64.
Main oscillator characteristics
Symbol
Parameter
Conditions
Value
Unit
Min
Typ
Max
gm
Oscillator
Transconductance
1.4
2.6
4.2
mA/V
VOSC
Oscillation Amplitude(1)
1.
Not 100% tested, guaranteed by design characterization
Peak to Peak
–
1.5
–
V
VAV
Oscillation Voltage level(1)
Sine wave middle
–
0.8
–
V
tSTUP
Oscillator Start-up Time(1)
Stable VDD - Crystal
–
6
10
ms
Stable VDD - Resonator
–
12ms
Table 65.
Main oscillator negative resistance (module)
CA = 15pF
CA = 25pF
CA = 35pF
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
4 MHz
545
Ω
1035
Ω
–
550
Ω
1050
Ω
–
430
Ω
850
Ω
–
8 MHz
240
Ω
450
Ω
–
170
Ω
350
Ω
–
120
Ω
250
Ω
–
CA
CA
Crystal
Resonator
ST10F272M
ST10F272M



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