ST10F271B datasheet(26/180 Pages) STMICROELECTRONICS

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Internal Flash memory

ST10F271B/ST10F271E

26/180

Internal Flash memory

5.1

Overview

The on-chip Flash is composed by one matrix module, 256 KBytes wide.

This module is on ST10 Internal bus, so it is called IFLASH

Figure 5.

Flash structure

The programming operations of the flash are managed by an embedded Flash

Program/Erase Controller (FPEC). The High Voltages needed for Program/Erase operations

are internally generated.

The Data bus is 32-bit wide for fetch accesses to IFLASH, while it is 16 bit wide for read

accesses to IFLASH. Read/write accesses to IFLASH Control Registers area are 16 bit

wide.

5.2

Functional description

5.2.1

Structure

The following table shows the Address space reserved to the Flash module.

Note:

The ST10F271 being based on the same silicon as the ST10F272, 256 KByte of Flash are

implemented on the device. The range 03’0000h - 04’FFFFh is not physically disabled even

if not available for use. Therefore this address range MUST be reserved by the application

Flash Control

Bank 0: 128 Kbyte

Program Memory

HV and Ref.

Generator

Program/Erase

Controller

I-BUS Interface

8 Kbyte Test-Flash

IFLASH

Control Section

Registers

Table 3.

Address space reserved to the Flash module

Description

Addresses

Size

IFLASH sectors

0x00 0000 to 0x02 FFFF

128 Kbyte

IFLASH reserved sector 1)

0x03 0000 to 0x04 FFFF

128 Kbyte

Reserved IBUS area

0x05 0000 to 0x07 FFFF

192 Kbyte

Registers and Flash internal reserved area

0x08 0000 to 0x08 FFFF

64 Kbyte

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