FN8976 Rev.6.03

Page 5

Mar 28, 2024

ISL70024SEH, ISL73024SEH Datasheet

3.

Specifications

3.1

Absolute Maximum Ratings

Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such

conditions can adversely impact product reliability and result in failures not covered by warranty.

3.2

Thermal Information

3.3

Recommended Operating Conditions

Parameter

Maximum

Unit

VDS

200

V

VDS[1]

1. Tested in a heavy ion environment at LET = 86.4MeV•cm2/mg(Si) at +125°C (TC).

160

V

VGS

-4 to 6

V

ESD Rating (Drain-to-Source)

Human Body Model (Tested per MIL-STD-883 TM3015)

2

kV

Machine Model (Tested per JESD22-A115C)

200

V

Charged Device Model (Tested per JS-002-2014)

750

V

ESD Rating (Gate-to-Source)

Human Body Model (Tested per MIL-STD-883 TM3015)

500

V

Machine Model (Tested per JESD22-A115C)

200

V

Charged Device Model (Tested per JS-002-2014)

750

V

Parameter

Package

Symbol

Conditions

Typical

Value

Maximum

Unit

Thermal Resistance

SMD Package J4.A

θJA[1]

1.

JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features.

See TB379.

Junction to air

42

-

°C/W

θJC[2]

2. For

JC, the case temperature location is on the solder terminations adjacent to the center of the package underside.

Junction to case

18.7

23.4

°C/W

Parameter

Minimum

Maximum

Unit

Maximum Junction Temperature

-

+150

°C

Storage Temperature Range

-65

+150

°C

Parameter

Maximum

Unit

Temperature

-55 to +125

°C

VDS

160

V

ID (VGS = 5.0V, TC = +25°C)[1]

1. TJ = +150°C. Current limited by package constraints.

7.5

A

ID (VGS = 5.0V, TC = +105°C)[1]

4.5

A