100.00

1000.00

10000.00

100000.00

1000000.00

120

130

140

150

160

170

180

Continuous T J (°C)

LM5116-HT

www.ti.com

SLVSBS8B – OCTOBER 2013 – REVISED JANUARY 2014

Electrical Characteristics (continued)

Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature range of -55°C to

+175°C and are provided for reference only. Unless otherwise specified, the following conditions apply: VIN = 48V,

VCC = 7.4 V, VCCX = 0 V, EN = 5 V, RT = 16 kΩ, no load on LO and HO.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

HO Gate Driver

VOLH

HO Low-state Output Voltage

IHO = 100 mA

0.17

0.8

V

VOHH

HO High-state Output Voltage

IHO = -100 mA,

0.45

V

VOHH = VHB – VHO

HO Rise Time

C-load = 1000 pF

19

ns

HO High-side Fall Time

C-load = 1000 pF

13

ns

IOHH

Peak HO Source Current

VHO = 0 V

1

A

IOLH

Peak HO Sink Current

VHO = VCC

2.2

A

HB to SW under-voltage

3

V

Switching Characteristics

LO Fall to HO Rise Delay

C-load = 0

75

ns

HO Fall to LO Rise Delay

C-load = 0

70

ns

xxx

(1)

See datasheet for absolute maximum and minimum recommended operating conditions.

(2)

Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect

life).

(3)

The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the

dominant failure mechanism affecting device wearout for the specific device process and design characteristics.

(4)

This device is qualified for 1000 hours of continuous operation at maximum rated temperature.

Figure 1. LM5116-HT Operating Life Derating Chart

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