PUSB3FR6

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© NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet

Rev. 1 — 25 February 2015

3 of 12

NXP Semiconductors

PUSB3FR6

ESD protection for ultra high-speed interfaces

6.

Characteristics

[1]

This parameter is guaranteed by design.

[2]

According to IEC 61000-4-5 (8/20

s current waveform).

[3]

100 ns Transmission Line Pulse (TLP); 50

; pulser at 80 ns.

Table 5.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

II = 1 mA

6

--V

ILR

reverse leakage current per channel; VI = 3 V

-

1

100

nA

VF

forward voltage

II = 1 mA

-0.7

-V

Cline

line capacitance

f = 1 MHz; VI =1.5 V

[1] -

0.35

0.40

pF

rdyn

dynamic resistance

TLP

[3]

positive transient

-

0.29

-



negative transient

-

0.29

-



Vsbck

snapback voltage

II = 1 A; TLP 100/10 ns

-

1.6

-

V

VCL

clamping voltage

IPP = 5 A; positive transient

[2] -3

-V

IPP = 5A;

negative transient

[2] -

3-

V