27291SL datasheet(3/15 Pages) FREESCALE

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MRFE6S9045NR1

RF Device Data

Freescale Semiconductor

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920-960 MHz, 50 ohm system) VDD = 28 Vdc,

IDQ = 350 mA, Pout = 16 W Avg., f = 920-960 MHz, GSM EDGE Signal

Power Gain

Gps

—

Drain Efficiency

ηD

—

Error Vector Magnitude

EVM

—

1.5

—

Spectral Regrowth at 400 kHz Offset

SR1

—

-62

—

dBc

Spectral Regrowth at 600 kHz Offset

SR2

—

-78

—

dBc

Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920-960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA,

Pout = 45 W, f = 920-960 MHz

Power Gain

Gps

—

Drain Efficiency

ηD

—

Input Return Loss

IRL

—

-12

—

Pout @ 1 dB Compression Point

(f = 940 MHz)

P1dB

—

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, 865-900 MHz Bandwidth

Video Bandwidth @ 48 W PEP Pout where IM3 = -30 dBc

(Tone Spacing from 100 kHz to VBW)

ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both

sidebands)

VBW

—

MHz

Gain Flatness in 35 MHz Bandwidth @ Pout = 10 W Avg.

—

0.72

—

Gain Variation over Temperature

(-30°C to +85°C)

ΔG

—

0.011

—

dB/°C

Output Power Variation over Temperature

(-30°C to +85°C)

ΔP1dB

—

0.006

—

dBm/°C

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