27291SL datasheet(2/15 Pages) FREESCALE

2 / 15 page

RF Device Data

Freescale Semiconductor

MRFE6S9045NR1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

3A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 66 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 200 μA)

VGS(th)

Vdc

Gate Quiescent Voltage

(VDD = 28 Vdc, ID = 350 mAdc, Measured in Functional Test)

VGS(Q)

2.3

3.1

3.8

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 1.0 Adc)

VDS(on)

0.05

0.23

0.3

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

1.02

—

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

Input Capacitance

(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single-Carrier

N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB

@ 0.01% Probability on CCDF

Power Gain

Gps

22.1

Drain Efficiency

ηD

30.5

—

Adjacent Channel Power Ratio

ACPR

—

-46

-44

dBc

Input Return Loss

IRL

—

-19

-9

(continued)

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