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CSD18510KCS 데이터시트(PDF) 3 Page - Texas Instruments

부품명 CSD18510KCS
상세설명  CSD18510KCS 40V N-Channel NexFETTM Power MOSFET
PDF  13 Pages
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제조업체  TI2 [Texas Instruments]
홈페이지  https://www.ti.com
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CSD18510KCS 데이터시트(HTML) 3 Page - Texas Instruments

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4 Specifications
4.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0V, ID = 250μA
40
V
IDSS
Drain-to-source leakage current
VGS = 0V, VDS = 32V
1
μA
IGSS
Gate-to-source leakage current
VDS = 0V, VGS = 20V
100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250μA
1.4
1.7
2.3
V
RDS(on)
Drain-to-source on-resistance
VGS = 4.5V, ID = 100A
2.0
2.6
mΩ
VGS = 10V, ID = 100A
1.4
1.7
gfs
Transconductance
VDS = 4V, ID = 100A
330
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
VGS = 0V, VDS = 20V, ƒ = 1MHz
8770
11400
pF
Coss
Output capacitance
832
1080
pF
Crss
Reverse transfer capacitance
424
551
pF
RG
Series gate resistance
0.9
1.8
Ω
Qg
Gate charge total (4.5 V)
VDS = 20V, ID = 100A
58
75
nC
Qg
Gate charge total (10 V)
118
153
nC
Qgd
Gate charge gate-to-drain
21
nC
Qgs
Gate charge gate-to-source
28
nC
Qg(th)
Gate charge at Vth
15
nC
Qoss
Output charge
VDS = 20V, VGS = 0V
35
nC
td(on)
Turnon delay time
VDS = 20V, VGS = 10V,
IDS = 100A, RG = 0Ω
10
ns
tr
Rise time
8
ns
td(off)
Turnoff delay time
29
ns
tf
Fall time
8
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = 100A, VGS = 0V
0.85
1.0
V
Qrr
Reverse recovery charge
VDS= 20V, IF = 100A,
di/dt = 300A/μs
70
nC
trr
Reverse recovery time
41
ns
4.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-case thermal resistance
0.6
°C/W
RθJA
Junction-to-ambient thermal resistance
62
°C/W
www.ti.com
CSD18510KCS
SLPS663C – MARCH 2017 – REVISED MARCH 2024
Copyright © 2024 Texas Instruments Incorporated
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Product Folder Links: CSD18510KCS



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