4.3 Typical MOSFET Characteristics (continued)

TA = 25°C (unless otherwise stated)

VDS - Drain-to-Source Voltage (V)

0.1

1

10

100

0.1

1

10

100

1000

D010

DC

10 ms

1 ms

100 µs

Single pulse, max RθJC = 0.6°C/W

Figure 4-10. Maximum Safe Operating Area

TAV - Time in Avalanche (ms)

0.01

0.1

1

1

10

100

D011

TC = 25qC

TC = 125qC

Figure 4-11. Single Pulse Unclamped Inductive Switching

TC - Case Temperature (°C)

-50

-25

0

25

50

75

100

125

150

175

200

0

40

80

120

160

200

240

D012

Max RθJC = 0.6°C/W

Figure 4-12. Maximum Drain Current vs Temperature

CSD18510KCS

SLPS663C – MARCH 2017 – REVISED MARCH 2024

www.ti.com

6

Submit Document Feedback

Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: CSD18510KCS