6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1) (2)

MIN

MAX

UNIT

Supply voltage range(3)

VDD

–0.5

4

V

Voltage range

Differential I/O

–0.5

4

V

Control pin

–0.5

VCC +0.5

V

Operating free-air temperature

–40

105

°C

Continuous power dissipation

See Section 6.4

Storage temperature

–55

125

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential voltages, are with respect to network ground terminal.

(3)

Tested in accordance with JEDEC Standard 22, Test Method A114-B

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM) (1)

±4000

V

Charged-device model (CDM) (2)

±1000

(1)

Tested in accordance with JEDEC Standard 22, Test Method C101-A

(2)

Tested in accordance with JEDEC Standard 22, Test Method A115-A

6.3 Recommended Operating Conditions

Nominal values for all parameters are at VCC = 3.3V and TA = 25°C, all temperature limits are specified by design

PARAMETER

CONDITIONS

MIN

NOM

MAX

UNIT

VDD

Supply voltage

3.0

3.3

3.6

V

VIH

Input high voltage

Control Pins, Signal Pins (Dx_SEL, OE) (HPDC, 5V Tolerant)

2.0

VDD

V

VIL

Input low voltage

Control Pins, Signal Pins (Dx_SEL, OE, HPDC)

–0.1

0.8

V

VI/O_Diff

Differential voltage (Dx,

AUXx)

Switch I/O diff voltage

0

1.8

Vpp

VI/O_CM

Common voltage (Dx,

AUXx)

Switch I/O common mode voltage

0

2.0

V

Operating free-air

temperature

–40

105

°C

6.4 Thermal Information

THERMAL METRIC(1)

HD3SS212

UNIT

nFBGA (ZXH)

48-Ball

θJA

Junction-to-ambient thermal resistance

64.9

°C/W

θJCtop

Junction-to-case (top) thermal resistance

28.7

°C/W

θJB

Junction-to-board thermal resistance

36.4

°C/W

ψJT

Junction-to-top characterization parameter

1.0

°C/W

ψJB

Junction-to-board characterization parameter

36.1

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

www.ti.com

HD3SS212

SLAS822D – DECEMBER 2011 – REVISED DECEMBER 2020

Copyright © 2020 Texas Instruments Incorporated

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