| 전자부품 데이터시트 검색엔진 |
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TMS28F002AST 데이터시트(PDF) 21 Page - Texas Instruments |
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TMS28F002AST 데이터시트(HTML) 21 Page - Texas Instruments |
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21 / 79 page ![]() TMS28F002Axy, TMS28F200Axy 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997 21 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 common electrical parameter (continued) 7 V VCC + 0.5 V 2.0 V 20 ns 20 ns 20 ns Figure 9. Maximum Positive Overshoot Waveform Table 9. AC Test Conditions VCCRANGE IOL (mA) IOH (mA) VZ† (V) VOL (V) VOH (V) VIL (V) VIH (V) CL (pF) tf (ns) tr (ns) 5 V ± 10% 2.1 – 0.4 1.8 0.8 2.0 0.45 2.4 100 <10 <10 3.3 V ± 0.3 V 0.5 – 0.5 1.5 1.5 1.5 0.0 3.0 50 <10 <10 2.7 to 3.6 V 0.1 – 0.1 1.35 1.35 1.35 0.0 2.7 50 <10 <10 † VZ is the value to which an output at high impedance will float. VZ is calculated by the following equation: VZ = VOH – IOH (VOH – VOL)/ (IOH – IOL). capacitance over recommended ranges of supply voltage and operating free-air temperature PARAMETER TEST CONDITIONS MIN MAX UNIT Ci Input capacitance f = 1 MHz, VI = 0V 8 pF Co Output capacitance VO = 0 V, f = 1 MHz 12 pF |
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