5

LM5025A

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SNVS293F – DECEMBER 2004 – REVISED AUGUST 2016

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Copyright © 2004–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

VIN to GND

–0.3

105

V

VCC to GND

–0.3

16

V

CS1, CS2 to GND

–0.3

1

V

All other inputs to GND

–0.3

7

V

Junction temperature, TJ

150

°C

Storage temperature, Tstg

–55

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM)(1)

±2000

V

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VIN voltage

13

90

V

External voltage applied to VCC

8

15

V

Operating junction temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

LM5025A

UNIT

PW (TSSOP)

NHQ (WSON)

16 PINS

16 PINS

RθJA

Junction-to-ambient thermal resistance

98.7

30

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

27.8

25.9

°C/W

RθJB

Junction-to-board thermal resistance

44.3

9.3

°C/W

ψJT

Junction-to-top characterization parameter

1.2

0.2

°C/W

ψJB

Junction-to-board characterization parameter

43.6

9.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

2.3

°C/W