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BUH2M20AP 데이터시트(PDF) 1 Page - STMicroelectronics |
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BUH2M20AP 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() BUH2M20AP HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s EXTRA HIGH VOLTAGE CAPABILITY s LOW OUTPUT CAPACITANCE s CHARACTERIZED FOR LINEAR MODE OPERATION. APPLICATIONS: s DESIGNED SPECIFICALLY FOR DYNAMIC FOCUS IN CTV AND MONITOR. DESCRIPTION The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ® INTERNAL SCHEMATIC DIAGRAM September 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 2000 V VCEO Collector-Emitter Voltage (IB = 0) 1200 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 30 mA ICM Collector Peak Current (tp < 5 ms) 40 mA Ptot Total Dissipation at Tc = 25 o C20 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 1 2 3 TO-220 1/4 |
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