| 전자부품 데이터시트 검색엔진 |
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BUH2M20AP 데이터시트(PDF) 2 Page - STMicroelectronics |
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BUH2M20AP 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 6.25 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCE = 2000 V 5 µA IEBO Emitter Cut-off Current (IC = 0) VEB = 4 V 10 µA VCEO Collector-Emitter Breakdown Voltage IC = 1 mA 1200 V VEBO Emitter-Base Voltage (IC = 0) IE = 10 µA 5 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2 mA IB = 400 µA5 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 mA IB = 400 µA2 V hFE ∗ DC Current Gain IC = 2 mA VCE = 10 V IC = 10 mA VCE = 10 V 10 10 Cob Output Capacitance VCB = 100 V IC = 0 f = 1MHz 3 pF ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area BUH2M20AP 2/4 |
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