ADS8317

www.ti.com .................................................................................................................................................... SBAS356D – JUNE 2007 – REVISED OCTOBER 2009

RECOMMENDED OPERATING CONDITIONS

MIN

TYP

MAX

UNIT

Low-voltage levels

2.7

3.6

V

Supply voltage, GND to VDD

5V logic levels

4.5

5.0

5.5

V

Reference input voltage

1

VDD/2

V

–IN to GND

–0.2

VDD + 0.2

V

Analog input voltage

+IN to GND

–0.2

VDD + 0.2

V

+IN – (–IN)

–VREF

+VREF

V

Operating junction temperature, TJ

–40

+125

°C

ELECTRICAL CHARACTERISTICS: VDD = +5V

At –40°C to +85°C, VREF = +2.5V, –IN = +2.5V, fSAMPLE = 250kHz, and fCLK = 24 × fSAMPLE, unless otherwise noted.

ADS8317I

ADS8317IB

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

ANALOG INPUT

Full-scale range

FSR +IN – (–IN)

–VREF

VREF

–VREF

VREF

V

Absolute input range

+IN

–0.1

VDD + 0.1

–0.1

VDD + 0.1

V

Hold

5

5

G

Ω

Input resistance

RON

Sampling

50

100

50

100

Ω

Input capacitance

During sampling

24

24

pF

Input leakage current

±50

±50

nA

Differential input capacitance

+IN to –IN, during sampling

20

20

pF

Full-power bandwidth

FSBW fS sinewave, SINAD = 60dB

500

500

kHz

DC ACCURACY

Resolution

16

16

Bits

No missing codes

NMC

16

16

16

16

Bits

Integral linearity error

INL

–2

±1.5

+2

–1.5

±0.8

+1.5

LSB

Differential linearity error

DNL

–1

±1

+2

–1

+0.7,–0.5

+1.25

LSB

Offset error

VOS

–2

±0.75

+2

–1

±0.5

+1

mV

Offset error drift

TCVOS

±3

±3

μV/°C

Positive

–32

±16

+32

–32

±16

+32

LSB

Gain error

GERR

Negative

–32

±16

+32

–32

±16

+32

LSB

Gain error drift

TCGERR

±0.1

±0.1

ppm/°C

Bipolar zero error

–2

±0.75

+2

–1

±0.5

+1

mV

Bipolar zero error drift

±3

±3

μV/°C

Noise

50

50

μVRMS

Power-supply rejection

PSRR 4.75V

≤ VDD ≤ 5.25V

1

1

LSB

SAMPLING DYNAMICS

Conversion time

tCONV 24kHz ≤ fCLK ≤ 6.0MHz

2.667

666.7

2.667

666.7

μs

(16 DCLOCKs)

Acquisition time

tAQ fCLK = 6.0MHz

0.75

0.75

μs

(4.5 DCLOCKs)

Throughput rate

250

250

kSPS

(22 DCLOCKs)

Clock frequency

0.024

6.0

0.024

6.0

MHz

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