TS2012IQT datasheet(7/29 Pages) STMICROELECTRONICS

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TS2012

Electrical characteristics

3.1

Electrical characteristic tables

Table 5. VCC = +5 V, GND = 0 V, Vic = 2.5 V, Tamb = 25 °C

(unless otherwise specified)

Symbol

Parameters and test conditions

Min.

Typ.

Max.

Unit

ICC

Supply current

No input signal, no load, both channels

ISTBY

Standby current

No input signal, VSTBY = GND

0.2

µA

Voo

Output offset voltage

Floating inputs, G = 6dB, RL = 8Ω

Output power

THD + N = 1 % max, f = 1 kHz, RL = 4 Ω

THD + N = 1 % max, f = 1 kHz, RL = 8 Ω

THD + N = 10 % max, f = 1 kHz, RL = 4 Ω

THD + N = 10 % max, f = 1 kHz, RL = 8 Ω

2.2

1.35

2.8

1.65

THD + N

Total harmonic distortion + noise

Po = 0.8 W, G = 6 dB, f =1 kHz, RL = 8 Ω

0.07

Efficiency

Efficiency per channel

Po = 2.2 W, RL = 4 Ω +15 µH

Po = 1.25 W, RL = 8 Ω+15 µH

PSRR

Power supply rejection ratio with inputs grounded

Cin = 1 µF (1), f = 217 Hz, RL = 8 Ω, Gain = 6 dB,

Vripple = 200 mVpp

Crosstalk

Channel separation

Po = 0.9 W, G = 6 dB, f = 1 kHz, RL = 8 Ω

CMRR

Common mode rejection ratio

Cin = 1 µF, f = 217 Hz, RL = 8 Ω, Gain = 6 dB,

ΔVICM = 200 mVpp

Gain

Gain value

G1 = G0 = VIL

G1 = VIL & G0 = VIH

G1 = VIH & G0 = VIL

G1 = G0 = VIH

5.5

11.5

17.5

23.5

6.5

12.5

18.5

24.5

Zin

Single ended input impedance

All gains, referred to ground

FPWM

Pulse width modulator base frequency

190

280

370

kHz

SNR

Signal to noise ratio (A-weighting)

Po = 1.3 W, G = 6 dB, RL = 8 Ω

tWU

Wakeup time

tSTBY

Standby time

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