L9907 datasheet(19/49 Pages) STMICROELECTRONICS

19 / 49 page

DS11800 Rev 5

19/49

L9907

Electrical specifications

3.3

ESD protection

HBM according to MIL 883C, Method 3015.7 or EIA/JESD22-A114_A. HBM with all

unzapped pins grounded.

Gate current selection pin

GCR

-0.3

4.6

-10

+10

Current sense amplifier pins

IS1+,IS1-,IS2+,IS2-

-7

-10

Differential voltage between ISx +/-

Abs |ISx+ - ISx-|

High-side drain sense

VDH

-4

-10

FET-driver pins

HS Bootstrap Cap pins: CBS_1 to 3

-0.3

Differential gate to source HS pins:

V(GHS_x) - V(SHS_x), x = 1 to 3(2)

-0.3

Source HS pins: SHS_1 to 3

-7

Source LS pins: SLS_1 to 3

-7

FET driver pins

Differential gate to source LS pins:

V(GLS_x) - V(SLS_x), x = 1 to 3(2)

-0.3

Current sense amplifier differential

voltage

BST_C-ISxx

-0.3

GND pins

BGND and DGND

-0.3

4.6

AGND and EP

-0.3

0.3

1. In standard battery level application (12 V systems) the I/O pins and Vcc pin can stand a short to battery up

to 35 V. A short to 35 V battery on any output pin also forces the Vcc to approximately 35 V. Care must be

taken in order to avoid that under such conditions the Vcc pin is strongly pulled down to 5 V (or 3.3 V) with

a current exceeding the absolute maximum ratings level.

2. Negative AMR is -0.3 V or -20 mA.

Table 9. Absolute maximum ratings (continued)

Parameter

Min

Max

Unit

Table 10. ESD protection

Parameter

Condition

Min

Max

Unit

Logic and power pins

Human body model

-2

FET driver pins

Human body model

-2

All pins but corner pins

Charge device model

-250

250

Corner pins

Charge device model

-750

750

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