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L9907 데이터시트(PDF) 23 Page - STMicroelectronics

부품명 L9907
상세설명  Automotive FET driver for 3 phase BLDC motor
PDF  49 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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DS11800 Rev 5
23/49
L9907
Electrical specifications
48
3.5.6
MOSFET drivers
The device is operated in the specified operating range, unless otherwise specified
(VCC = 3.20 V to 5.25 V, VB = 4.2 V to 54 V, Tj = -40 °C to 150 °C).
ILIM
Boost switch current limit
-
250
-
500
mA
Lbst
Boost regulator inductance
-
-
47
-
µH
Cbst
Boost regulator capacitance
-
-
2
-
µF
fSW_BST
Boost regulator switching frequency
-
280
350
420
kHz
BST_HOV Boost over voltage threshold
-
63
-
73
V
BST_HOV
_HYST
Boost over voltage hysteresis
-
8
-
10
V
Tbst
Boost regulator start-up time (design info) Cbst = 2 µF
-
1
-
ms
VCAP
Supply voltage for the LS gate driver
ICAP = 25 mA
V(SLS3)
+8.5
-
V(SLS3)
+15
V
ICAP
Output current for the voltage regulator
for the LS
VB = 14 V
-65
-
-20
mA
VCBSX
Bootstrap capacitor voltage
V(CBSx)-V(SHSx)
V(SHSx) = 14 V,
ICBSX = -6 mA
8.5
-
15
V
ICBSX
Bootstrap capacitor charge current at pin
CBSx
-6
-
18
mA
Table 16. Boost converter electrical characteristics (continued)
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
Table 17. MOSFET drivers electrical characteristics
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
VGS(L)
Low level output voltage
VGx-VSx @ I= 50 mA
-
100
250
mV
VGS(H)
High level output voltage
VGx-VSx @ I= -5 mA
7.5
-
15
V
IGxx_1
Turn-on/off current with GCR = 1
kΩ (1)
IG_1,IG_0 = 11 100% Imax
450
600
750
mA
IG_1,IG_0 = 10 75% Imax
337
450
563
mA
IG_1,IG_0 = 01 50% Imax
225
300
375
mA
IG_1,IG_0 = 00 25% Imax
112
150
188
mA
IGxx_2
Turn-on/off current with GCR = 6
IG_1,IG_0 = 11 100% Imax
75
100
125
mA
IG_1,IG_0 = 10 75% Imax
56
75
94
mA
IG_1,IG_0 = 01 50% Imax
37
50
63
mA
IG_1,IG_0 = 00 25% Imax
18
25
32
mA
ISLSx(2)
Low-side driver SLS output current GCR = 1 kΩ, PWM signals low
-
-
3.3
mA
ISHSx(2)
High-side driver SHS output current GCR = 1 kΩ, PWM signals low
-
-3.3
mA
GCR_STG Gate driver over current protection
-
-
-
880
Ω
GCR_OL Gate driver under current protection -
22
-
-
RGxxON
ON-resistance of SINK stage
GCR = 1 kΩ, IG_1,IG_0=11, I =
25 mA injected into Gate pin
--
5
Ω



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