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STPS20SM100ST 데이터시트(PDF) 2 Page - STMicroelectronics |
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STPS20SM100ST 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values, with terminals 1 and 3 short circuited, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current δ = 0.5, square wave TC = 125 °C 20 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 350 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 1080 W Tstg Storage temperature range -65 to +150 °C Tj Maximum operating junction temperature (1) 150 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit Rth(j-c) Junction to case 1.3 °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (with terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM - 10 30 µA Tj = 125 °C - 10 30 mA Tj = 25 °C VR = 70 V - 5 µA Tj = 125 °C - 5 mA VF (2) Forward voltage drop Tj = 25 °C IF = 5 A - 565 mV Tj = 125 °C - 480 Tj = 25 °C IF = 10 A - 685 Tj = 125 °C - 560 620 Tj = 25 °C IF = 20 A - 800 900 Tj = 125 °C - 630 700 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.6 x IF(AV) + 0.005 x IF 2 (RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier STPS20SM100S Characteristics DS6172 - Rev 4 page 2/10 |
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