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PM8804TR 데이터시트(PDF) 22 Page - STMicroelectronics

부품명 PM8804TR
상세설명  PWM peak current mode controller for PoE and telecom systems
PDF  27 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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PM8804TR 데이터시트(HTML) 22 Page - STMicroelectronics

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Layout guidelines
PM8804
22/27
DocID031629 Rev 1
6.2
How to layout the PM8804 ground pins
PM8804 is provided with two different pins of ground AGND and PGND plus an exposed
pad.
The exposed pad must be connected to AGND and is recommended a fill area with at least
a matrix of 3 x 3 vias to AGND plane.
Increase the number of AGND power planes helps improve the heat dissipation and it is
recommended under the PM8804.
Is recommended to use a wide power copper plane for AGND connection and when is
possible avoid to use traces.
The board ground must be separated into PGND and AGND: pin 11 and pin 9 must be
referred to PGND; all other circuitry and all others components must be connected to
AGND.
The AGND must be connected to PGND in one point only, and it has to be as much as
possible close to the pin10.
It is recommended to use a small copper area for the PGND.
AGND can be a wide copper plane connecting the several components referred to it.
On secondary side is recommend to keep separated the power path of the power secondary
GND (output side of transformer, secondary rectifier, output capacitors) from the feedback
network GND, which will be connected only at the output capacitors side.
The low potential of PoE/48V voltage can be routed with a wide trace at the input and along
the input filter, to become a copper plane close to the PM8804.
6.3
Thermal aspects
Design the primary MOSFET area with at least 6 - 9 vias of connection to the internal
copper area.
Increase where possible the number of connected power planes, at least below the
MOSFETs and diodes to improve the heat dissipation.
Design the secondary rectifier area with at least 6 - 9 vias of connection to the internal
copper area.
The Thermal copper area has to be sized taking into account the thermal reason and
its impact on EMI when placed under switching devices like power MOSFETs and
diodes.



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