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PM8805 데이터시트(PDF) 9 Page - STMicroelectronics

부품명 PM8805
상세설명  IEEE 802.3bt PoE-PD interface with embedded dual active bridge
PDF  45 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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PM8805 데이터시트(HTML) 9 Page - STMicroelectronics

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DS12813 Rev 1
9/45
PM8805
Pin description and connection diagram
45
34, 35
GND45
System low potential; it is the return of the second active bridge and
it is connected to the Source of the IN45 low-side MOSFET. It must
be connected to the system AGND, together with the other bridges'
grounds.
42, 43
GND78
System low potential; it is the return of the second active bridge and
it is connected to the Source of the IN78 low-side MOSFET. It must
be connected to the system AGND, together with the other bridges'
grounds.
EP1
EP1
Exposed pad
Connect the pad to a PCB copper plane to improve heat dissipation;
it must be electrically connected to the IN78 signal. Internally the
pad is connected with the drains of the lower side MOSFETs used in
the 2nd bridge.
EP2
EP2
Exposed pad
Connect the pad to a PCB copper plane to improve heat dissipation;
it must be electrically connected to the IN45 signal. Internally the
pad is connected with the drains of the lower side MOSFETs used in
the 2nd bridge.
EP3
EP3
Exposed pad
Connect the pad to a PCB copper plane to improve heat dissipation;
it must be electrically connected to the IN36 signal. Internally the
pad is connected with the drains of the lower side MOSFETs used in
the 1st bridge.
EP4
EP4
Exposed pad
Connect the pad to a PCB copper plane to improve heat dissipation;
it must be electrically connected to the IN12 signal. Internally the
pad is connected with the drains of the lower side MOSFETs used in
the 1st bridge.
EP5
EP5
Main exposed pad
Connect this pad to a PCB copper plane to improve heat dissipation;
it must be electrically connected to VOB. Internally this pad is
connected with the drain of the upper side MOSFETs used in the
bridges.
EP6
EP6
Exposed pad
Connect the pad to a PCB copper plane to improve heat dissipation;
it must be electrically connected to the VOB signal. Internally the
pad is connected with EP5, the drain of the high-side MOSFET used
in the hot swap section.
Table 2. Pin description (continued)
Pin#
Name
Function



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