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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IS25LE01G-RILA3-TY 데이터시트(PDF) 183 Page - Integrated Silicon Solution, Inc |
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IS25LE01G-RILA3-TY 데이터시트(HTML) 183 Page - Integrated Silicon Solution, Inc |
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183 / 186 page  IS25LE01G IS25WE01G Integrated Silicon Solution, Inc.- www.issi.com 183 Rev. A6 01/14/2025 9.9 PROGRAM/ERASE PERFORMANCE Parameter Typ Max Unit Sector Erase Time (4Kbyte) 100 300 ms Block Erase Time (32Kbyte) 0.14 0.5 s Block Erase Time (64Kbyte) 0.17 1.0 s Block Erase Time (256Kbyte) 0.68 4.0 s Chip Erase Time 90 400 s Page Programming Time 256byte 0.3 1.0 ms 512byte 0.6 2.0 ms Byte Program 10 50 µs Note: These parameters are characterized and not 100% tested. 9.10 RELIABILITY CHARACTERISTICS Parameter Min Max Unit Test Method Endurance 100,000 - Cycles JEDEC Standard A117 Latch-Up -100 +100 mA JEDEC Standard 78 Note: These parameters are characterized and not 100% tested. 9.11 DATA RETENTION CHARACTERISTICS Parameter Test Conditions Typ Unit Test Method Data Retention 100K Program/Erase Cycles, 55°C 120 Year JEDEC Standard 47I PCHTDR 100K Program/Erase Cycles, 75°C 12.8 Year Note: These parameters are characterized and not 100% tested. |
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