STTH1R04-Y

Characteristics

DocID024449 Rev 2

5/12

Figure 7: Reverse recovery time versus dIF / dt

(typical values)

Figure 8: Peak reverse recovery current versus

dIF / dt (typical values)

Figure 9: Relative variation of dynamic parameters

versus junction temperature

Figure 10: Transient peak forward voltage versus

dIF / dt (typical values)

Figure 11: Forward recovery time versus dIF / dt

(typical values)

Figure 12: Thermal resistance junction to ambient

total versus copper surface under each lead (SMA)

0

5

10

15

20

25

30

35

40

45

50

55

60

65

70

10

100

1000

t

RR(ns)

I

F= 1 A

V

R =320 V

T

j=125 °C

T

j=25 °C

dIF/dt(A/µs)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

10

100

1000

I

RM(A)

I

F= 1 A

V

R =320 V

T

j=125 °C

T

j=25 °C

dIF/dt(A/µs)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

25

50

75

100

125

150

Q

RR; IRM [T j] / QRR; IRM [T j=125°C]

I

R M

Q

R R

I

F= 1 A

V

R =320 V

Tj(°C)

Q

RR; IRM [T j] / QRR; IRM [T j=125°C]

0

5

10

15

20

25

30

0

50

100

150

200

250

300

350

400

450

500

V

Fp(V)

I

F=1 A

T

j=125 °C

dIF/dt(A/µs)

0

5

10

15

20

25

30

35

40

45

50

55

0

50

100

150

200

250

300

350

400

450

500

t

FR(ns)

I

F=1 A

T

j=125 °C

dIF/dt(A/µs)

R

th (j -a) ( C/W)

°

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

S

CU(cm²)

SMA

epoxy printed board FR4, copper thickness Cu = 35 µm