IS43TR16640C datasheet(1/89 Pages) ISSI

부품명	IS43TR16640C

상세설명	128MX8, 64MX16 1Gb DDR3 SDRAM

PDF	89 Pages

Scroll/Zoom	100%

제조업체	ISSI [Integrated Silicon Solution, Inc]

홈페이지	http://www.issi.com

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IS43/46TR16640C, IS43/46TR16640CL

IS43/46TR81280C, IS43/46TR81280CL

Integrated Silicon Solution, Inc. – www.issi.com –

1

Rev. E

12/27/2024

128MX8, 64MX16 1Gb DDR3 SDRAM

JANUARY 2025

FEATURES

•

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V

•

Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V

- Backward compatible to 1.5V

•

High speed data transfer rates with system

frequency up to 1066 MHz

•

8 internal banks for concurrent operation

•

8n-bit pre-fetch architecture

•

Programmable CAS Latency

•

Programmable Additive Latency: 0, CL-1,CL-2

•

Programmable CAS WRITE latency (CWL) based

on tCK

•

Programmable Burst Length: 4 and 8

•

Programmable Burst Sequence: Sequential or

Interleave

•

BL switch on the fly

•

Auto Self Refresh(ASR)

•

Self Refresh Temperature(SRT)

•

Refresh Interval:

7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 µs (8192 cycles/32 ms) Tc= 85°C to 105°C

1.95 µs (8192 cycles/16 ms) Tc= 105°C to 115°C

0.97 µs (8192 cycles/8 ms) Tc= 115°C to 125°C

•

Partial Array Self Refresh

•

Asynchronous RESET pin

•

TDQS (Termination Data Strobe) supported (x8

only)

•

OCD (Off-Chip Driver Impedance Adjustment)

•

Dynamic ODT (On-Die Termination)

•

Driver strength : RZQ/7, RZQ/6 (RZQ = 240

Ω )

•

Write Leveling

•

Up to 200 MHz in DLL off mode

•

Operating temperature:

Commercial (TC = 0°C to +95°C)

Industrial (TC = -40°C to +95°C)

Automotive, A1 (TC = -40°C to +95°C)

Automotive, A2 (TC = -40°C to +105°C)

Automotive, A25 (TC = -40°C to +115°C)

Automotive, A3 (TC = -40°C to +125°C)

OPTIONS

•

Configuration:

128Mx8

64Mx16

•

Green Package:

96-ball BGA (9mm x 13mm) for x16

96-ball BGA (7.5mm x 13mm) for x16

78-ball BGA (8mm x 10.5mm) for x8

ADDRESS TABLE

Parameter

128Mx8

64Mx16

Row Addressing

A0-A13

A0-A12

Column Addressing

A0-A9

Bank Addressing

BA0-2

Page size

1KB

2KB

Auto Precharge Addressing

A10/AP

BL switch on the fly

A12/BC#

SPEED BIN

Speed Option

125J

107M

093N

Units

JEDEC Speed Grade

DDR3-1600J

DDR3-1866M

DDR3-2133N

CL-nRCD-nRP

10-10-10

13-13-13

14-14-14

tCK

tRCD,tRP(min)

12.5

13.91

13.09

ns

Note: Faster speed options may be backward compatible to slower speed options. Refer to timing tables (8.3)

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

유사한 부품 번호 - IS43TR16640C

제조업체	부품명	데이터시트	상세설명
Integrated Silicon Solu...	IS43TR16640A	2Mb / 71P	128MX8, 64MX16 1Gb DDR3 SDRAM
	IS43TR16640B	3Mb / 88P	Programmable CAS Latency
	IS43TR16640BL	3Mb / 88P	Programmable CAS Latency
	IS43TR16640ED	3Mb / 75P	128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC B1 03/12/2018
	IS43TR16640ED-125KBLI	3Mb / 74P	128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

More results

유사한 설명 - IS43TR16640C

제조업체	부품명	데이터시트	상세설명
Hynix Semiconductor	H5TQ1G43AFP	4Mb / 77P	1Gb DDR3 SDRAM
	H5TQ1G43BFR	589Kb / 32P	1Gb DDR3 SDRAM
	H5TQ1G43TFR	458Kb / 31P	1Gb DDR3 SDRAM
	H5PS1G63EFR-20L	1Mb / 80P	1Gb(64Mx16) DDR2 SDRAM
Integrated Silicon Solu...	IS43TR16640A	2Mb / 71P	128MX8, 64MX16 1Gb DDR3 SDRAM
Hynix Semiconductor	H5TQ1G63DFR	2Mb / 172P	1Gb DDR3 SDRAM
	H5TQ1G83DFR	303Kb / 34P	1Gb DDR3 SDRAM
	H5TQ1G83EFR	598Kb / 33P	1Gb DDR3 SDRAM
Integrated Silicon Solu...	IS43TR16640ED-15HBLI	3Mb / 74P	128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC
Advantech Co., Ltd.	AQD-D31GN13-SX	544Kb / 12P	240Pin DDR3 1333 UDIMM 1GB Based on 128Mx8 2013-09-24

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